PART |
Description |
Maker |
M59DR032A M59DR032B M59DR032A120ZB1T M59DR032A100Z |
2M X 16 FLASH 1.8V PROM, 120 ns, PBGA48 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory 32兆位Mb x16插槽,双行,第低压闪 32 Mbit 2Mb x16 / Dual Bank / Page Low Voltage Flash Memory 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
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http:// NUMONYX STMicroelectronics N.V. 意法半导 ST Microelectronics
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M45PE80 M45PE80-VMF6G M45PE80-VMF6P M45PE80-VMF6TG |
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface 8 Mbit / Low Voltage / Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface 4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门,串行闪
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http:// STMICROELECTRONICS[STMicroelectronics] ST Microelectronics STMicroelectronics N.V.
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M45PE20 M45PE20-VMN6 M45PE20-VMN6G M45PE20-VMN6P M |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门,串行闪 From old datasheet system 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
M45PE80-VMP6P |
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
ST Microelectronics
|
M45PE10-VMN6 M45PE10-VMN6G M45PE10-VMN6T M45PE10-V |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
ST Microelectronics
|
M25PE40-VMP6G M25PE40-VMP6TG |
4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 25 MHz SPI Bus, Standard Pinout
|
ST Microelectronics
|
M29W064FB90N3E M29W064FB90N3F M29W064FT |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
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Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
IS41C16105 IS41C16105-50K IS41C16105-50KE IS41C161 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 1M X 16 FAST PAGE DRAM, 50 ns, PDSO42 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 1M X 16 FAST PAGE DRAM, 50 ns, PDSO44
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Integrated Silicon Solution Inc ISSI[Integrated Silicon Solution, Inc] Integrated Circuit Solution Inc Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
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NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
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STMicroelectronics ST Microelectronics
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